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| UltraThinTM LEDs CxxxUT230-S000 Cree's UltraThin LEDs combine highly efficient InGaN materials with Cree's proprietary G*SiC(R) substrate to deliver superior price/performance for blue LEDs. These vertically structured LED chips are small in size and require a low forward voltage. Cree's UTTM series chips are tested for conformity to optical and electrical specifications and the ability to withstand 1000 V ESD. Applications include keypad backlighting where sub-miniaturization and thinner form factors are required. FEATURES * * Small Chip - 230 x 230 x 85 m Low Forward Voltage - * 3.3V Typical at 20 mA APPLICATIONS * Mobile Phone Keypads - - * * White LEDs Blue LEDs UT LED Performance - 8.0 mW min. (455-475 nm) Blue Audio Product Display Lighting Mobile Appliance Keypads * * Single Wire Bond Structure Class 2 ESD Rating CxxxXT230-S000 Chip Diagram Top View G*SiC LED Chip 230 x 230 m Mesa (junction) 176 x 176 m Gold Bond Pad 105 m Diameter Bottom View SiC Substrate Bottom Surface 150 x 150 m SiC Substrate h = 85 m Backside Metallization 80 x 80 m Die Cross Section InGaN Anode (+) .C CPR3CC Rev Data Sheet: Cathode (-) Subject to change without notice. www.cree.com Maximum Ratings at TA = 25C Notes &3 DC Forward Current Peak Forward Current (1/10 duty cycle @ 1 kHz) LED Junction Temperature Reverse Voltage Operating Temperature Range Storage Temperature Range Electrostatic Discharge Threshold (HBM) Note 2 Note 2 CxxxUT230-S000 30 mA 100 mA 125C 5V -40C to +100C -40C to +100C 1000 V Class 2 Note 3 Electrostatic Discharge Classification (MIL-STD-883E) Typical Electrical/Optical Characteristics at TA = 25C, If = 20 mA Part Number Forward Voltage (Vf, V) Min. C460UT230-S0100 C460UT230-S0100 Mechanical Specifications Description P-N Junction Area (m) Top Area (m) Bottom Area (Substrate) (m) Chip Thickness (m) Au Bond Pad Diameter (m) Au Bond Pad Thickness (m) Back Contact Metal Area (m) 2.7 2.7 Typ. 3.3 3.3 Max. 3.7 3.7 Reverse Current [I(Vr=5V), A] Max. 1 1 Full Width Half Max (D, nm) Typ. 21 22 CxxxUT230-S000 Dimension 176 x 176 230 x 230 150 x 150 85 105 1.2 80 x 80 Tolerance 25 25 25 10 -5, +15 0.5 25 Notes: 1. 2. 3. 4. Maximum ratings are package dependent. The above ratings were determined using a T-1 3/4 package (with Hysol OS4000 epoxy) for characterization. Ratings for other packages may differ. The forward currents (DC and Peak) are not limited by the die but by the effect of the LED junction temperature on the package. The junction temperature limit of 125C is a limit of the T-1 3/4 package; junction temperature should be characterized in a specific package to determine limitations. Assembly processing temperature must not exceed 325C (< 5 seconds). Product resistance to electrostatic discharge (ESD) according to the HBM is measured by simulating ESD using a rapid avalanche energy test (RAET). The RAET procedures are designed to approximate the minimum ESD ratings shown. The ESD classification of Class 2 is based on sample testing according to MIL-STD-883E. All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled and operated at 20 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given are within the range of average values expected by manufacturer in large quantities and are provided for information only. All measurements were made using lamps in T-1 3/4 packages (with Hysol OS4000 epoxy). Optical characteristics measured in an integrating sphere using Illuminance E. Caution: To obtain optimum output efficiency, the amount of epoxy used should be characterized based upon the specific application. Copyright (c) 2004-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo and G*SiC are registered trademarks, and UltraThin and UT are trademarks of Cree, Inc. Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com 2 CPR3CC Rev. C Standard Bins for CxxxUT230-S000 LED chips are sorted to the radiant flux and dominant wavelength bins shown. Sorted die sheets contain die from only one bin. Sorted die kit (CXXXUT230-S0100) orders may be filled with any or all bins (CxxxUT230-00100) contained in the kit. All radiant flux values are measured at If = 20 mA and all dominant wavelength values are measured at If = 20 mA. C460UT230-S000 Radiant Flux 8.0 mW 455 nm C460UT230-0105 C460UT230-0106 C460UT230-0107 C460UT230-0108 457.5 nm 460 nm 462.5 nm Dominant Wavelength - If = 20 mA 465 nm C470UT230-S000 Radiant Flux 8.0 mW 465 nm C470UT230-0105 C470UT230-0106 C470UT230-0107 C470UT230-0108 467.5 nm 470 nm 472.5 nm Dominant Wavelength - If = 20 mA 475 nm Copyright (c) 2004-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo and G*SiC are registered trademarks, and UltraThin and UT are trademarks of Cree, Inc. Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com 3 CPR3CC Rev. C Characteristic Curves These are representative measurements for the UltraThin product. Actual curves will vary slightly for the various radiant flux and dominant wavelength bins. Dominant Wavelength Shift vs Forward Current Forward Current vs Forward Voltage 5 35 30 Dominant Wavelength Shift (nm) 4 Forward Current (mA) 25 3 20 2 15 1 10 0 5 0 0 0.5 1 1.5 2 2.5 3 3.5 -1 0 5 10 15 20 25 30 35 Forward Voltage (V) Forward Current (mA) Relative Intensity vs Forward Voltage 100 160 Relative Intensity vs Peak Wavelength 140 80 120 Relative Intensity (%) 0 5 10 15 20 25 30 35 400 Forward Current (mA) 500 Wavelength (nm) 600 % Intensity 100 60 80 60 40 40 20 20 0 Copyright (c) 2004-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo and G*SiC are registered trademarks, and UltraThin and UT are trademarks of Cree, Inc. Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com 4 CPR3CC Rev. C |
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